BUZ81
vs
BUK456-800A
feature comparison
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
SIEMENS A G
|
NXP SEMICONDUCTORS
|
Part Package Code |
SFM
|
|
Package Description |
TO-220, 3 PIN
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count |
3
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
8541.29.00.95
|
Avalanche Energy Rating (Eas) |
410 mJ
|
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
800 V
|
800 V
|
Drain Current-Max (ID) |
4 A
|
4 A
|
Drain-source On Resistance-Max |
2.5 Ω
|
3 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
75 pF
|
50 pF
|
JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
125 W
|
125 W
|
Pulsed Drain Current-Max (IDM) |
16 A
|
16 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
355 ns
|
210 ns
|
Turn-on Time-Max (ton) |
110 ns
|
65 ns
|
Base Number Matches |
2
|
3
|
Case Connection |
|
DRAIN
|
|
|
|
Compare BUZ81 with alternatives
Compare BUK456-800A with alternatives