BUK456-800A vs MTP4N80E feature comparison

BUK456-800A NXP Semiconductors

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MTP4N80E Freescale Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS MOTOROLA SEMICONDUCTOR PRODUCTS
Package Description FLANGE MOUNT, R-PSFM-T3 ,
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE Single
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 50 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 125 W
Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 210 ns
Turn-on Time-Max (ton) 65 ns
Base Number Matches 3 6
Rohs Code No
Drain Current-Max (Abs) (ID) 4 A
Power Dissipation-Max (Abs) 125 W

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