BUZ73ALHXKSA1 vs BUZ31HXKSA1 feature comparison

BUZ73ALHXKSA1 Infineon Technologies AG

Buy Now Datasheet

BUZ31HXKSA1 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB TO-220AB
Package Description GREEN, PLASTIC, TO-220, 3 PIN GREEN, PLASTIC, TO-220, 3 PIN
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks 4 Weeks
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE AVALANCHE RATED
Avalanche Energy Rating (Eas) 120 mJ 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 5.5 A 14.5 A
Drain-source On Resistance-Max 0.6 Ω 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 22 A 58 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

Compare BUZ73ALHXKSA1 with alternatives

Compare BUZ31HXKSA1 with alternatives