BUZ31HXKSA1 vs BUZ32H3045A feature comparison

BUZ31HXKSA1 Infineon Technologies AG

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BUZ32H3045A Infineon Technologies AG

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB D2PAK
Package Description GREEN, PLASTIC, TO-220, 3 PIN SMALL OUTLINE, R-PSSO-G2
Pin Count 3 4
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks 4 Weeks
Additional Feature AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Rating (Eas) 200 mJ 120 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 14.5 A 9.5 A
Drain-source On Resistance-Max 0.2 Ω 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-263AA
JESD-30 Code R-PSFM-T3 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 58 A 38 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Case Connection DRAIN
Moisture Sensitivity Level 1
Power Dissipation-Max (Abs) 75 W

Compare BUZ31HXKSA1 with alternatives

Compare BUZ32H3045A with alternatives