BUZ71 vs IRFZ30 feature comparison

BUZ71 Vishay Siliconix

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IRFZ30 Motorola Semiconductor Products

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SILICONIX INC MOTOROLA INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 12 A 30 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 40 W 75 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Base Number Matches 2 1
HTS Code 8541.29.00.95
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Case Connection DRAIN
DS Breakdown Voltage-Min 50 V
Drain-source On Resistance-Max 0.05 Ω
Feedback Cap-Max (Crss) 200 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Power Dissipation Ambient-Max 75 W
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 80 ns
Turn-on Time-Max (ton) 60 ns

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