BUZ71
vs
IRFZ24N
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
MICROSEMI CORP
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE
DS Breakdown Voltage-Min
50 V
55 V
Drain Current-Max (ID)
56 A
17 A
Drain-source On Resistance-Max
0.1 Ω
0.07 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220
TO-220AB
JESD-30 Code
R-PSFM-T2
R-PSFM-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
20
4
Pbfree Code
Rohs Code
Part Package Code
TO-220AB
Package Description
TO-220AB, 3 PIN
Pin Count
3
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
71 mJ
Case Connection
DRAIN
Operating Temperature-Max
175 °C
Power Dissipation Ambient-Max
45 W
Power Dissipation-Max (Abs)
45 W
Pulsed Drain Current-Max (IDM)
68 A
Transistor Application
SWITCHING
Compare BUZ71 with alternatives
Compare IRFZ24N with alternatives