BUZ71 vs HUF75307P3 feature comparison

BUZ71 Vishay Siliconix

Buy Now Datasheet

HUF75307P3 Harris Semiconductor

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SILICONIX INC HARRIS SEMICONDUCTOR
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 12 A 13 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 40 W 35 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 2 1
Package Description FLANGE MOUNT, R-PSFM-T3
HTS Code 8541.29.00.95
Case Connection DRAIN
DS Breakdown Voltage-Min 55 V
Drain-source On Resistance-Max 0.09 Ω
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Power Dissipation Ambient-Max 35 W
Qualification Status Not Qualified
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 60 ns

Compare BUZ71 with alternatives

Compare HUF75307P3 with alternatives