BUZ31H3046XKSA1 vs BSZ22DN20NS3GATMA1 feature comparison

BUZ31H3046XKSA1 Infineon Technologies AG

Buy Now Datasheet

BSZ22DN20NS3GATMA1 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code Yes No
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code TO-262AA
Package Description GREEN, PLASTIC, TO-262, 3 PIN SMALL OUTLINE, S-PDSO-N5
Pin Count 3 8
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks 18 Weeks
Samacsys Manufacturer Infineon Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 200 mJ 30 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 14.5 A 7 A
Drain-source On Resistance-Max 0.2 Ω 0.225 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3 S-PDSO-N8
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR SQUARE
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 95 W
Pulsed Drain Current-Max (IDM) 58 A 28 A
Surface Mount NO YES
Terminal Finish TIN Tin (Sn)
Terminal Form THROUGH-HOLE NO LEAD
Terminal Position SINGLE DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Case Connection DRAIN
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING

Compare BUZ31H3046XKSA1 with alternatives

Compare BSZ22DN20NS3GATMA1 with alternatives