BSZ22DN20NS3GATMA1 vs BUZ73LHXKSA1 feature comparison

BSZ22DN20NS3GATMA1 Infineon Technologies AG

Buy Now Datasheet

BUZ73LHXKSA1 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code No Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, S-PDSO-N5 FLANGE MOUNT, R-PSFM-T3
Pin Count 8 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 30 mJ 120 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 7 A 7 A
Drain-source On Resistance-Max 0.225 Ω 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N8 R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 8 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 28 A 28 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Tin (Sn)
Terminal Form NO LEAD THROUGH-HOLE
Terminal Position DUAL SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code TO-220AB
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
JEDEC-95 Code TO-220AB

Compare BSZ22DN20NS3GATMA1 with alternatives

Compare BUZ73LHXKSA1 with alternatives