BUZ215
vs
IRF833
feature comparison
| Part Life Cycle Code |
Active
|
Contact Manufacturer
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| Additional Feature |
FREDFET
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
500 V
|
450 V
|
| Drain Current-Max (ID) |
5 A
|
4 A
|
| Drain-source On Resistance-Max |
1.5 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-220AB
|
|
| JESD-30 Code |
R-PSFM-T3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
20 A
|
|
| Qualification Status |
COMMERCIAL
|
|
| Surface Mount |
NO
|
|
| Terminal Finish |
NOT SPECIFIED
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
3
|
19
|
| ECCN Code |
|
EAR99
|
|
|
|
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