BUZ20
vs
IRF531
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SEMELAB LTD
INTERSIL CORP
Package Description
FLANGE MOUNT, R-MSFM-T3
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
80 V
Drain Current-Max (ID)
14 A
14 A
Drain-source On Resistance-Max
0.2 Ω
0.16 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-MSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Rohs Code
No
HTS Code
8541.29.00.95
Case Connection
DRAIN
JEDEC-95 Code
TO-220AB
JESD-609 Code
e0
Operating Temperature-Max
175 °C
Power Dissipation Ambient-Max
79 W
Power Dissipation-Max (Abs)
79 W
Pulsed Drain Current-Max (IDM)
56 A
Terminal Finish
TIN LEAD
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
71 ns
Turn-on Time-Max (ton)
66 ns
Compare BUZ20 with alternatives
Compare IRF531 with alternatives