Datasheets
BUZ20 by:

14A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET

Part Details for BUZ20 by TT Electronics Power and Hybrid / Semelab Limited

Overview of BUZ20 by TT Electronics Power and Hybrid / Semelab Limited

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Electronic Manufacturing Renewable Energy

Part Details for BUZ20

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BUZ20 Part Data Attributes

BUZ20 TT Electronics Power and Hybrid / Semelab Limited
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BUZ20 TT Electronics Power and Hybrid / Semelab Limited 14A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET
Part Life Cycle Code Obsolete
Ihs Manufacturer SEMELAB LTD
Package Description FLANGE MOUNT, R-MSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-MSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for BUZ20

This table gives cross-reference parts and alternative options found for BUZ20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFP12N08 Power Field-Effect Transistor, 12A I(D), 80V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor BUZ20 vs RFP12N08
MTP12N10E 12A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC BUZ20 vs MTP12N10E
MTP12N05 Power Field-Effect Transistor, 12A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products BUZ20 vs MTP12N05
IRF520N Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG BUZ20 vs IRF520N
BUK453-100A TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power NXP Semiconductors BUZ20 vs BUK453-100A
IRF533 Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor BUZ20 vs IRF533
IRF531 14A, 80V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited BUZ20 vs IRF531
IRF532 Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor BUZ20 vs IRF532
IRF533 12A, 80V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics BUZ20 vs IRF533
IRF532 12A, 100V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUZ20 vs IRF532
Part Number Description Manufacturer Compare
MTP12N10E 12A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC BUZ20 vs MTP12N10E
MTP10N08 10A, 80V, 0.33ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC BUZ20 vs MTP10N08
IRF532 12A, 100V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUZ20 vs IRF532
BUZ72 Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens BUZ20 vs BUZ72
RFP12N08 Power Field-Effect Transistor, 12A I(D), 80V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor BUZ20 vs RFP12N08
IRF533 Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor BUZ20 vs IRF533
IRF531 14A, 80V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited BUZ20 vs IRF531
IRF531 14A, 80V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics BUZ20 vs IRF531
MTP12N10E 12A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN onsemi BUZ20 vs MTP12N10E
BUZ20 13.5A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN Texas Instruments BUZ20 vs BUZ20

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