BUK9E15-60E,127
vs
IPD144N06NGBTMA1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
INFINEON TECHNOLOGIES AG
Part Package Code
TO-262
TO-252AA
Package Description
PLASTIC, TO-262, I2PAK-3
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
4
Manufacturer Package Code
SOT226
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
AVALANCHE RATED
Avalanche Energy Rating (Eas)
40.5 mJ
240 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
54 A
50 A
Drain-source On Resistance-Max
0.015 Ω
0.0144 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-262AA
TO-252AA
JESD-30 Code
R-PSIP-T3
R-PSSO-G2
JESD-609 Code
e3
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
96 W
Pulsed Drain Current-Max (IDM)
216 A
200 A
Reference Standard
AEC-Q101; IEC-60134
Surface Mount
NO
YES
Terminal Finish
Tin (Sn)
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Pbfree Code
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare BUK9E15-60E,127 with alternatives
Compare IPD144N06NGBTMA1 with alternatives