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BUK763R1-40B,118 vs PHB225NQ04T feature comparison

BUK763R1-40B,118 NXP Semiconductors

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PHB225NQ04T Philips Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS PHILIPS SEMICONDUCTORS
Part Package Code D2PAK
Package Description PLASTIC, D2PAK-3
Pin Count 3
Manufacturer Package Code SOT404
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.75
Factory Lead Time 4 Weeks
Avalanche Energy Rating (Eas) 1600 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 75 A 75 A
Drain-source On Resistance-Max 0.0031 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 300 W 300 W
Pulsed Drain Current-Max (IDM) 902 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish TIN MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 2 2
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

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