Findchips: Compare BUK763R1-40B,118 vs PHB225NQ04T

BUK763R1-40B,118 vs PHB225NQ04T feature comparison

Buy Now Datasheet

Buy Now Datasheet

Rohs Code	Yes	Yes
Part Life Cycle Code	Obsolete	Obsolete
Ihs Manufacturer	NEXPERIA	NXP SEMICONDUCTORS
Part Package Code	D2PAK
Package Description	PLASTIC, D2PAK-3	PLASTIC, D2PAK-3
Pin Count	3	3
Manufacturer Package Code	SOT404
Reach Compliance Code	not_compliant	not_compliant
ECCN Code	EAR99	EAR99
Samacsys Manufacturer	Nexperia
Avalanche Energy Rating (Eas)	1600 mJ	560 mJ
Case Connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	40 V	40 V
Drain Current-Max (ID)	75 A	75 A
Drain-source On Resistance-Max	0.0031 Ω	0.0031 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSSO-G2	R-PSSO-G2
JESD-609 Code	e3	e3
Moisture Sensitivity Level	1	1
Number of Elements	1	1
Number of Terminals	2	2
Operating Mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	175 °C
Package Body Material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Cel)	245	245
Polarity/Channel Type	N-CHANNEL	N-CHANNEL
Pulsed Drain Current-Max (IDM)	902 A	240 A
Qualification Status	Not Qualified	Not Qualified
Reference Standard	AEC-Q101
Surface Mount	YES	YES
Terminal Finish	TIN	MATTE TIN
Terminal Form	GULL WING	GULL WING
Terminal Position	SINGLE	SINGLE
Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	SWITCHING
Transistor Element Material	SILICON	SILICON
Base Number Matches	1	1
Power Dissipation-Max (Abs)		300 W
	Transistors » Power Field-Effect Transistors	Transistors » Power Field-Effect Transistors