BUK438-800B
vs
BUZ356
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
INFINEON TECHNOLOGIES AG
|
Package Description |
FLANGE MOUNT, R-PSFM-T3
|
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
800 V
|
800 V
|
Drain Current-Max (ID) |
6.6 A
|
5 A
|
Drain-source On Resistance-Max |
2 Ω
|
2 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
4
|
Rohs Code |
|
No
|
Additional Feature |
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
|
720 mJ
|
JEDEC-95 Code |
|
TO-218
|
JESD-609 Code |
|
e0
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
125 W
|
Pulsed Drain Current-Max (IDM) |
|
21 A
|
Terminal Finish |
|
TIN LEAD
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare BUK438-800B with alternatives
Compare BUZ356 with alternatives