BSZ42DN25NS3GATMA1
vs
BUZ73AL
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, S-PDSO-N5
ROHS COMPLIANT, PLASTIC PACKAGE-3
Pin Count
8
3
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
16 Weeks, 5 Days
Samacsys Manufacturer
Infineon
Infineon
Avalanche Energy Rating (Eas)
40 mJ
120 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
250 V
200 V
Drain Current-Max (ID)
5 A
5.5 A
Drain-source On Resistance-Max
0.425 Ω
0.6 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
S-PDSO-N8
R-PSFM-T3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
8
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
SQUARE
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
33.8 W
40 W
Pulsed Drain Current-Max (IDM)
20 A
22 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
Tin (Sn)
MATTE TIN
Terminal Form
NO LEAD
THROUGH-HOLE
Terminal Position
DUAL
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Part Package Code
TO-220AB
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
JEDEC-95 Code
TO-220AB
Compare BSZ42DN25NS3GATMA1 with alternatives
Compare BUZ73AL with alternatives