BSS138P,215 vs BSS138P feature comparison

BSS138P,215 NXP Semiconductors

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BSS138P Galaxy Microelectronics

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Rohs Code Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code TO-236
Package Description PLASTIC PACKAGE-3
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.36 A
Drain-source On Resistance-Max 1.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1140 W
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish TIN Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 2 3

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