BSS124
vs
SJVP0345N2
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
SIEMENS A G
|
SUPERTEX INC
|
| Package Description |
CYLINDRICAL, O-PBCY-T3
|
CYLINDRICAL, O-MBCY-W3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
400 V
|
450 V
|
| Drain Current-Max (ID) |
0.12 A
|
0.4 A
|
| Drain-source On Resistance-Max |
28 Ω
|
7.5 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
6 pF
|
50 pF
|
| JEDEC-95 Code |
TO-92
|
TO-39
|
| JESD-30 Code |
O-PBCY-T3
|
O-MBCY-W3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
1 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
THROUGH-HOLE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| HTS Code |
|
8541.29.00.95
|
| Case Connection |
|
DRAIN
|
| Power Dissipation Ambient-Max |
|
6 W
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare BSS124 with alternatives
Compare SJVP0345N2 with alternatives