BSP250/T3
vs
BSP250,135
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Not Recommended
|
| Ihs Manufacturer |
NEXPERIA
|
NEXPERIA
|
| Package Description |
SMALL OUTLINE, R-PDSO-G4
|
SMALL OUTLINE, R-PDSO-G4
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2017-02-01
|
2017-02-01
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
3 A
|
3 A
|
| Drain-source On Resistance-Max |
0.4 Ω
|
0.4 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
12 A
|
12 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
TIN
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Part Package Code |
|
SC-73
|
| Pin Count |
|
4
|
| Manufacturer Package Code |
|
SOT223
|
| Factory Lead Time |
|
8 Weeks
|
| Samacsys Manufacturer |
|
Nexperia
|
|
|
|
Compare BSP250/T3 with alternatives
Compare BSP250,135 with alternatives
-
BSP250,135 vs 934033450135
-
BSP250,135 vs BSP250-TAPE-7
-
BSP250,135 vs BSP250T/R
-
BSP250,135 vs BSP250-T
-
BSP250,135 vs BSP250-TAPE-13
-
BSP250,135 vs BSP250
-
BSP250,135 vs BSP250,115
-
BSP250,135 vs 934033450115
-
BSP250,135 vs NDT452AP_NL