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BSP250/T3 vs BSP250,115 feature comparison

BSP250/T3 Nexperia

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BSP250,115 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NEXPERIA NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G4 PLASTIC, SMD, SC-73, 4 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Date Of Intro 2017-02-01
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 3 A 3 A
Drain-source On Resistance-Max 0.4 Ω 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 12 A 12 A
Surface Mount YES YES
Terminal Finish TIN TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Part Package Code SC-73
Pin Count 4
Manufacturer Package Code SOT223
HTS Code 8541.21.00.75
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 5 W
Power Dissipation-Max (Abs) 1.65 W
Qualification Status Not Qualified
Turn-off Time-Max (toff) 140 ns
Turn-on Time-Max (ton) 80 ns
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

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Compare BSP250,115 with alternatives