BSP135
vs
BSP135E-6327
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SIEMENS A G
SIEMENS A G
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
0.1 A
0.1 A
Drain-source On Resistance-Max
60 Ω
60 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G4
R-PDSO-G4
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
4
4
Operating Mode
DEPLETION MODE
DEPLETION MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
1.7 W
Pulsed Drain Current-Max (IDM)
0.3 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
Base Number Matches
4
2
Part Package Code
SOT-223
Package Description
SMALL OUTLINE, R-PDSO-G4
Pin Count
4
Compare BSP135 with alternatives
Compare BSP135E-6327 with alternatives