BSP129E-6327 vs BSP129L6327 feature comparison

BSP129E-6327 Infineon Technologies AG

Buy Now Datasheet

BSP129L6327 Infineon Technologies AG

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code SOT-223
Package Description SMALL OUTLINE, R-PDSO-G4 GREEN, PLASTIC PACKAGE-4
Pin Count 4 4
Reach Compliance Code compliant compliant
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 240 V 240 V
Drain Current-Max (ID) 0.2 A 0.35 A
Drain-source On Resistance-Max 20 Ω 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode DEPLETION MODE DEPLETION MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish NOT SPECIFIED MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 2 3
ECCN Code EAR99
JESD-609 Code e3
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 1.8 W
Power Dissipation-Max (Abs) 1.8 W
Pulsed Drain Current-Max (IDM) 1.4 A

Compare BSP129E-6327 with alternatives

Compare BSP129L6327 with alternatives