BSP125L6433HTMA1 vs BSP125H6433 feature comparison

BSP125L6433HTMA1 Infineon Technologies AG

Buy Now Datasheet

BSP125H6433 Infineon Technologies AG

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC PACKAGE-4 GREEN, PLASTIC PACKAGE-4
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Additional Feature LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 0.12 A 0.12 A
Drain-source On Resistance-Max 45 Ω 45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 0.48 A 0.48 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Pbfree Code Yes
Rohs Code Yes
Pin Count 4
JESD-609 Code e3
Reference Standard AEC-Q101
Terminal Finish TIN

Compare BSP125L6433HTMA1 with alternatives

Compare BSP125H6433 with alternatives