BSO307N
vs
934055451118
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
SIEMENS A G
NEXPERIA
Package Description
SMALL OUTLINE, R-PDSO-G8
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Configuration
SEPARATE, 2 ELEMENTS
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
4.2 A
3.4 A
Drain-source On Resistance-Max
0.075 Ω
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Rohs Code
Date Of Intro
2017-02-01
Additional Feature
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
13 mJ
JEDEC-95 Code
MS-012AA
JESD-609 Code
e4
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Pulsed Drain Current-Max (IDM)
14 A
Terminal Finish
NICKEL PALLADIUM GOLD
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Compare BSO307N with alternatives
Compare 934055451118 with alternatives