BSM50GD120DLC
vs
BSM50GD120DN2G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
| Part Package Code |
MODULE
|
|
| Package Description |
MODULE-17
|
FLANGE MOUNT, R-XUFM-T39
|
| Pin Count |
17
|
39
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Infineon
|
Infineon
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Collector Current-Max (IC) |
85 A
|
78 A
|
| Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
| Configuration |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
| Gate-Emitter Voltage-Max |
20 V
|
20 V
|
| JESD-30 Code |
R-XUFM-X17
|
R-XUFM-T39
|
| Number of Elements |
6
|
6
|
| Number of Terminals |
17
|
39
|
| Operating Temperature-Max |
150 °C
|
125 °C
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
350 W
|
400 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
UNSPECIFIED
|
THROUGH-HOLE
|
| Terminal Position |
UPPER
|
UPPER
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
370 ns
|
450 ns
|
| Turn-on Time-Nom (ton) |
110 ns
|
100 ns
|
| VCEsat-Max |
2.6 V
|
3.7 V
|
| Base Number Matches |
3
|
2
|
| Transistor Application |
|
POWER CONTROL
|
|
|
|
Compare BSM50GD120DLC with alternatives
Compare BSM50GD120DN2G with alternatives