BSM50GD120DLC
vs
BSM50GD120DN2
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
SIEMENS A G
|
Part Package Code |
MODULE
|
|
Package Description |
MODULE-17
|
FLANGE MOUNT, R-XUFM-T17
|
Pin Count |
17
|
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Infineon
|
|
Case Connection |
ISOLATED
|
ISOLATED
|
Collector Current-Max (IC) |
85 A
|
72 A
|
Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
Configuration |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
Gate-Emitter Voltage-Max |
20 V
|
20 V
|
JESD-30 Code |
R-XUFM-X17
|
R-XUFM-T17
|
Number of Elements |
6
|
6
|
Number of Terminals |
17
|
17
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
350 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
UNSPECIFIED
|
THROUGH-HOLE
|
Terminal Position |
UPPER
|
UPPER
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Nom (toff) |
370 ns
|
380 ns
|
Turn-on Time-Nom (ton) |
110 ns
|
44 ns
|
VCEsat-Max |
2.6 V
|
3 V
|
Base Number Matches |
3
|
3
|
HTS Code |
|
8541.29.00.95
|
Fall Time-Max (tf) |
|
100 ns
|
Gate-Emitter Thr Voltage-Max |
|
6.5 V
|
Power Dissipation Ambient-Max |
|
2100 W
|
Rise Time-Max (tr) |
|
100 ns
|
Turn-off Time-Max (toff) |
|
500 ns
|
Turn-on Time-Max (ton) |
|
100 ns
|
|
|
|
Compare BSM50GD120DLC with alternatives
Compare BSM50GD120DN2 with alternatives