BSM50GB120DN2
vs
2MBI25L-120
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SIEMENS A G
COLLMER SEMICONDUCTOR INC
Package Description
FLANGE MOUNT, R-CUFM-X7
FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Case Connection
ISOLATED
Collector Current-Max (IC)
78 A
25 A
Collector-Emitter Voltage-Max
1200 V
1200 V
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Fall Time-Max (tf)
100 ns
Gate-Emitter Thr Voltage-Max
6.5 V
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-CUFM-X7
R-PUFM-X7
Number of Elements
2
2
Number of Terminals
7
7
Operating Temperature-Max
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
800 W
Qualification Status
Not Qualified
Not Qualified
Rise Time-Max (tr)
100 ns
Surface Mount
NO
NO
Terminal Form
UNSPECIFIED
UNSPECIFIED
Terminal Position
UPPER
UPPER
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
500 ns
Turn-off Time-Nom (toff)
380 ns
800 ns
Turn-on Time-Max (ton)
100 ns
Turn-on Time-Nom (ton)
44 ns
500 ns
VCEsat-Max
3 V
Base Number Matches
3
1
Pin Count
7
Additional Feature
LOW SATURATION VOLTAGE, HIGH SWITCHING SPEED
Transistor Application
POWER CONTROL
Compare BSM50GB120DN2 with alternatives
Compare 2MBI25L-120 with alternatives