BSF045N03MQ3G vs RQ3E180GNTB feature comparison

BSF045N03MQ3G Infineon Technologies AG

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RQ3E180GNTB ROHM Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG ROHM CO LTD
Package Description CHIP CARRIER, R-MBCC-N2 HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN
Pin Count 2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 30 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 18 A 18 A
Drain-source On Resistance-Max 0.0059 Ω 0.0055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-MBCC-N2 R-PDSO-F5
Number of Elements 1 1
Number of Terminals 2 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 28 W
Pulsed Drain Current-Max (IDM) 252 A 72 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form NO LEAD FLAT
Terminal Position BOTTOM DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Samacsys Manufacturer ROHM Semiconductor
Moisture Sensitivity Level 1

Compare BSF045N03MQ3G with alternatives

Compare RQ3E180GNTB with alternatives