BSD214SN
vs
SSM5H10TU
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
End Of Life
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
TOSHIBA CORP
|
| Package Description |
GREEN, PLASTIC PACKAGE-6
|
SMALL OUTLINE, R-PDSO-F5
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
AVALANCHE RATED
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
20 V
|
20 V
|
| Drain Current-Max (ID) |
1.5 A
|
1.6 A
|
| Drain-source On Resistance-Max |
0.14 Ω
|
0.139 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
9 pF
|
|
| JESD-30 Code |
R-PDSO-G6
|
R-PDSO-F5
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
6
|
5
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Reference Standard |
AEC-Q101
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin (Sn)
|
|
| Terminal Form |
GULL WING
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
4
|
3
|
| Pin Count |
|
5
|
| Operating Temperature-Max |
|
125 °C
|
| Qualification Status |
|
Not Qualified
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare BSD214SN with alternatives
Compare SSM5H10TU with alternatives