BSC22DN20NS3G
vs
BUZ31H3045AATMA1
feature comparison
Pbfree Code |
Yes
|
No
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Not Recommended
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
Package Description |
TDSON-8
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count |
8
|
4
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Infineon
|
|
Avalanche Energy Rating (Eas) |
30 mJ
|
200 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
7 A
|
14.5 A
|
Drain-source On Resistance-Max |
0.225 Ω
|
0.2 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-N8
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
8
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
34 W
|
|
Pulsed Drain Current-Max (IDM) |
28 A
|
58 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
|
Terminal Form |
NO LEAD
|
GULL WING
|
Terminal Position |
DUAL
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Part Package Code |
|
D2PAK
|
Additional Feature |
|
AVALANCHE RATED
|
JEDEC-95 Code |
|
TO-263AB
|
|
|
|
Compare BSC22DN20NS3G with alternatives
Compare BUZ31H3045AATMA1 with alternatives