BSC22DN20NS3G
vs
MTP8N15L
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Not Recommended
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
MOTOROLA INC
|
| Package Description |
TDSON-8
|
|
| Pin Count |
8
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Infineon
|
|
| Avalanche Energy Rating (Eas) |
30 mJ
|
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
150 V
|
| Drain Current-Max (ID) |
7 A
|
8 A
|
| Drain-source On Resistance-Max |
0.225 Ω
|
0.45 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-N8
|
R-PSFM-T3
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
8
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
34 W
|
75 W
|
| Pulsed Drain Current-Max (IDM) |
28 A
|
20 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
Tin (Sn)
|
TIN LEAD
|
| Terminal Form |
NO LEAD
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
3
|
| HTS Code |
|
8541.29.00.95
|
| Additional Feature |
|
LOGIC LEVEL COMPATIBLE, LEADFORM OPTIONS ARE AVAILABLE
|
| JEDEC-95 Code |
|
TO-220AB
|
| Power Dissipation Ambient-Max |
|
75 W
|
|
|
|
Compare BSC22DN20NS3G with alternatives
Compare MTP8N15L with alternatives