BSC048N025SG vs HAT2134H feature comparison

BSC048N025SG Infineon Technologies AG

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HAT2134H Renesas Electronics Corporation

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Rohs Code Yes
Part Life Cycle Code Obsolete Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG RENESAS ELECTRONICS CORP
Package Description SMALL OUTLINE, R-PDSO-F5 LFPAK-5
Pin Count 8 5
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 185 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V 20 V
Drain Current-Max (ID) 19 A 60 A
Drain-source On Resistance-Max 0.0048 Ω 0.0058 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8 R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1 1
Number of Terminals 8 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 63 W
Pulsed Drain Current-Max (IDM) 200 A 240 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form FLAT GULL WING
Terminal Position DUAL SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

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