Part Details for BSC048N025SG by Infineon Technologies AG
Overview of BSC048N025SG by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BSC048N025SG
BSC048N025SG CAD Models
BSC048N025SG Part Data Attributes:
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BSC048N025SG
Infineon Technologies AG
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Datasheet
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BSC048N025SG
Infineon Technologies AG
Power Field-Effect Transistor, 19A I(D), 25V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 185 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 19 A | |
| Drain-source On Resistance-Max | 0.0048 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 63 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC048N025SG
This table gives cross-reference parts and alternative options found for BSC048N025SG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC048N025SG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HAT2166H | 45A, 30V, 0.0061ohm, N-CHANNEL, Si, POWER, MOSFET, LFPAK-5 | Renesas Electronics Corporation | BSC048N025SG vs HAT2166H |
| FDS7088N3 | 21A, 30V, 0.004ohm, N-CHANNEL, Si, POWER, MOSFET, FLMP, SO-8 | Rochester Electronics LLC | BSC048N025SG vs FDS7088N3 |
| HAT2166H-EL-E | Nch Single Power Mosfet 30V 45A 3.8Mohm Lfpak, LFPAK, /Embossed Tape | Renesas Electronics Corporation | BSC048N025SG vs HAT2166H-EL-E |
| BSC079N03SG | Power Field-Effect Transistor, 14.6A I(D), 30V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC048N025SG vs BSC079N03SG |
| BSC059N03SG | Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC048N025SG vs BSC059N03SG |
| HAT2096H | Power Field-Effect Transistor, 40A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK-5 | Hitachi Ltd | BSC048N025SG vs HAT2096H |
| HAT2164H-EL-E | Nch Single Power Mosfet 30V 60A 3.1Mohm Lfpak, LFPAK, /Embossed Tape | Renesas Electronics Corporation | BSC048N025SG vs HAT2164H-EL-E |
| BSC042N03LSG | Power Field-Effect Transistor, 20A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC048N025SG vs BSC042N03LSG |
| BSC057N03LSGXT | Power Field-Effect Transistor, 17A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC048N025SG vs BSC057N03LSGXT |
| FDS7082N3 | Power Field-Effect Transistor, 17.5A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | Fairchild Semiconductor Corporation | BSC048N025SG vs FDS7082N3 |