BSC029N025SG vs HAT2166H-EL-E feature comparison

BSC029N025SG Rochester Electronics LLC

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HAT2166H-EL-E Renesas Electronics Corporation

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Not Recommended
Ihs Manufacturer ROCHESTER ELECTRONICS LLC RENESAS ELECTRONICS CORP
Package Description GREEN, PLASTIC, TDSON-8 SMALL OUTLINE, R-PSSO-G4
Pin Count 8 5
Reach Compliance Code unknown compliant
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 680 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V 30 V
Drain Current-Max (ID) 24 A 45 A
Drain-source On Resistance-Max 0.0045 Ω 0.0061 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8 R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level NOT SPECIFIED 1
Number of Elements 1 1
Number of Terminals 8 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 200 A 180 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form FLAT GULL WING
Terminal Position DUAL SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 20
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Part Package Code LFPAK
Manufacturer Package Code PTZZ0005DA
ECCN Code EAR99
Samacsys Manufacturer Renesas Electronics
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 25 W

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