BSC029N025SG
vs
HAT2166H-EL-E
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Not Recommended
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
RENESAS ELECTRONICS CORP
|
Package Description |
GREEN, PLASTIC, TDSON-8
|
SMALL OUTLINE, R-PSSO-G4
|
Pin Count |
8
|
5
|
Reach Compliance Code |
unknown
|
compliant
|
Additional Feature |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
|
|
Avalanche Energy Rating (Eas) |
680 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
25 V
|
30 V
|
Drain Current-Max (ID) |
24 A
|
45 A
|
Drain-source On Resistance-Max |
0.0045 Ω
|
0.0061 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-F8
|
R-PSSO-G4
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
NOT SPECIFIED
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
8
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
200 A
|
180 A
|
Qualification Status |
COMMERCIAL
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
FLAT
|
GULL WING
|
Terminal Position |
DUAL
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
20
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Part Package Code |
|
LFPAK
|
Manufacturer Package Code |
|
PTZZ0005DA
|
ECCN Code |
|
EAR99
|
Samacsys Manufacturer |
|
Renesas Electronics
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
25 W
|
|
|
|
Compare BSC029N025SG with alternatives
Compare HAT2166H-EL-E with alternatives