BRA143EMP
vs
PDTD114ET-T
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
HITACHI LTD
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
BUILT IN BIAS RESISTOR RATIO 1
BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.5 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
20
56
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
PNP
NPN
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Collector-Base Capacitance-Max
8 pF
Operating Temperature-Max
150 °C
Transition Frequency-Nom (fT)
100 MHz
VCEsat-Max
0.3 V
Compare BRA143EMP with alternatives
Compare PDTD114ET-T with alternatives