BRA143EMP vs MMUN2232LT3 feature comparison

BRA143EMP Renesas Electronics Corporation

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MMUN2232LT3 onsemi

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RENESAS TECHNOLOGY CORP ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PDSO-G3 CASE 318-08, 3 PIN
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT IN BIAS RESISTOR RATIO 1 BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 20 15
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 5
Pbfree Code No
Rohs Code No
Part Package Code SOT-23
Manufacturer Package Code CASE 318-08
JEDEC-95 Code TO-236AB
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.2 W
Terminal Finish TIN LEAD

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