BR24G16FV-3E2 vs BR24T16FV-WE2 feature comparison

BR24G16FV-3E2 ROHM Semiconductor

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BR24T16FV-WE2 ROHM Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Not Recommended
Ihs Manufacturer ROHM CO LTD ROHM CO LTD
Package Description LSSOP, SSOP-8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Additional Feature SEATED HT-CALCULATED
Clock Frequency-Max (fCLK) 0.4 MHz 0.4 MHz
JESD-30 Code R-PDSO-G8 R-PDSO-G8
Length 4.4 mm 4.4 mm
Memory Density 16384 bit 16384 bit
Memory IC Type EEPROM EEPROM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 8 8
Number of Words 2048 words 2048 words
Number of Words Code 2000 2000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 2KX8 2KX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LSSOP LSSOP
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, LOW PROFILE, SHRINK PITCH SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
Parallel/Serial SERIAL SERIAL
Seated Height-Max 1.35 mm 1.35 mm
Serial Bus Type SPI I2C
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 1.6 V 1.6 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Form GULL WING GULL WING
Terminal Pitch 0.65 mm 0.65 mm
Terminal Position DUAL DUAL
Width 3 mm 3 mm
Write Cycle Time-Max (tWC) 5 ms 5 ms
Base Number Matches 1 1
Pbfree Code Yes
Samacsys Manufacturer ROHM Semiconductor
Alternate Memory Width 1
Data Retention Time-Min 40
Endurance 1000000 Write/Erase Cycles
I2C Control Byte 1010MMMR
JESD-609 Code e3
Moisture Sensitivity Level 1
Output Characteristics 3-STATE
Package Equivalence Code SSOP8,.25
Peak Reflow Temperature (Cel) NOT SPECIFIED
Programming Voltage 2.5 V
Qualification Status Not Qualified
Standby Current-Max 0.000002 A
Supply Current-Max 0.002 mA
Supply Voltage-Nom (Vsup) 2.5 V
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Write Protection HARDWARE

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