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BLF6G20-45,112 vs BLF6G20-45,135 feature comparison

BLF6G20-45,112 NXP Semiconductors

Buy Now Datasheet

BLF6G20-45,135 NXP Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Part Package Code DFM DFM
Package Description ROHS COMPLIANT, CERAMIC PACKAGE-2 ROHS COMPLIANT, CERAMIC PACKAGE-2
Pin Count 2 2
Manufacturer Package Code SOT608A SOT608A
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.75 8541.29.00.75
Case Connection SOURCE SOURCE
Configuration SINGLE SINGLE
DS Breakdown Voltage-Min 65 V 65 V
Drain Current-Max (ID) 13 A 13 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND L BAND
JESD-30 Code R-CDFM-F2 R-CDFM-F2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 225 °C 225 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Transistors » RF Power Field-Effect Transistors
Transistors » RF Power Field-Effect Transistors

Compare BLF6G20-45,112 with alternatives

Compare BLF6G20-45,135 with alternatives