BGD712
vs
BGD712C
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Package Description |
SOT115J, 7 PIN
|
SOT-115J
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| Additional Feature |
LOW NOISE, HIGH RELIABILITY
|
LOW NOISE, HIGH RELIABILITY
|
| Characteristic Impedance |
75 Ω
|
75 Ω
|
| Construction |
MODULE
|
MODULE
|
| Gain |
19 dB
|
19 dB
|
| Operating Frequency-Max |
750 MHz
|
750 MHz
|
| Operating Frequency-Min |
40 MHz
|
40 MHz
|
| Operating Temperature-Max |
100 °C
|
100 °C
|
| Operating Temperature-Min |
-20 °C
|
-20 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Equivalence Code |
SOT-115J
|
SOT-115J
|
| Power Supplies |
24 V
|
24 V
|
| RF/Microwave Device Type |
WIDE BAND HIGH POWER
|
NARROW BAND LOW POWER
|
| Supply Current-Max |
410 mA
|
410 mA
|
| Technology |
HYBRID
|
|
| Base Number Matches |
5
|
2
|
| Number of Functions |
|
1
|
|
|
|
Compare BGD712 with alternatives
Compare BGD712C with alternatives