BFU520A vs MMBTH10-13 feature comparison

BFU520A NXP Semiconductors

Buy Now Datasheet

MMBTH10-13 Diodes Incorporated

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS DIODES INC
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer NXP
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.03 A 0.05 A
Collector-Emitter Voltage-Max 12 V 25 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 60
Highest Frequency Band L BAND ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.45 W
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 10000 MHz 650 MHz
Base Number Matches 1 1
Pbfree Code No
Rohs Code No
Pin Count 3
Collector-Base Capacitance-Max 0.7 pF
JESD-609 Code e0
Qualification Status Not Qualified
Terminal Finish TIN LEAD

Compare BFU520A with alternatives

Compare MMBTH10-13 with alternatives