BFQ163
vs
BFP540ESDE6433
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
NXP SEMICONDUCTORS
INFINEON TECHNOLOGIES AG
Package Description
CYLINDRICAL, O-MBCY-W3
SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Additional Feature
HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
HIGH RELIABILITY, LOW NOISE
Case Connection
COLLECTOR
EMITTER
Collector Current-Max (IC)
0.5 A
0.08 A
Collector-Emitter Voltage-Max
10 V
4 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE
DC Current Gain-Min (hFE)
25
50
JEDEC-95 Code
TO-39
JESD-30 Code
O-MBCY-W3
R-PDSO-G4
Number of Elements
1
1
Number of Terminals
3
4
Package Body Material
METAL
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
CYLINDRICAL
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Form
WIRE
GULL WING
Terminal Position
BOTTOM
DUAL
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
1000 MHz
34000 MHz
Base Number Matches
1
1
Rohs Code
Part Package Code
SOT
Pin Count
4
Collector-Base Capacitance-Max
0.24 pF
Highest Frequency Band
L BAND
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max (Abs)
0.25 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare BFQ163 with alternatives
Compare BFP540ESDE6433 with alternatives