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BFG19SE6327 vs BFG19S feature comparison

BFG19SE6327 Infineon Technologies AG

Buy Now Datasheet

BFG19S Siemens

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG SIEMENS A G
Package Description SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Base Capacitance-Max 1.4 pF 1.4 pF
Collector-Emitter Voltage-Max 15 V 15 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 70 30
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Number of Elements 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 1 W 1 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 5500 MHz 5500 MHz
Base Number Matches 2 2
JESD-609 Code e0
Power Gain-Min (Gp) 13 dB
Terminal Finish Tin/Lead (Sn/Pb)
Transistors » RF Small Signal Bipolar Transistors
Transistors » RF Small Signal Bipolar Transistors

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