BF998WR
vs
BF998WR-T
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Package Description
MICRO MINIATURE, PLASTIC PACKAGE-4
SMALL OUTLINE, R-PDSO-G4
Pin Count
4
4
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOW NOISE
LOW NOISE
Case Connection
SOURCE
SOURCE
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
12 V
12 V
Drain Current-Max (ID)
0.03 A
0.03 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-PDSO-G4
R-PDSO-G4
JESD-609 Code
e3
Number of Elements
2
2
Number of Terminals
4
4
Operating Mode
DUAL GATE, DEPLETION MODE
DUAL GATE, DEPLETION MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
0.3 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
6
4
Compare BF998WR with alternatives
Compare BF998WR-T with alternatives