BF998WR-T
vs
BF998WR-TAPE-13
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PDSO-G4
SMALL OUTLINE, R-PDSO-G4
Pin Count
4
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOW NOISE
LOW NOISE
Case Connection
SOURCE
SOURCE
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
12 V
12 V
Drain Current-Max (ID)
0.03 A
0.03 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-PDSO-G4
R-PDSO-G4
Number of Elements
2
1
Number of Terminals
4
4
Operating Mode
DUAL GATE, DEPLETION MODE
DUAL GATE, DEPLETION MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Compare BF998WR-T with alternatives
Compare BF998WR-TAPE-13 with alternatives