BF998,215 vs BF998R feature comparison

BF998,215 NXP Semiconductors

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BF998R North American Philips Discrete Products Div

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Rohs Code Yes No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV
Part Package Code SOT-143
Package Description PLASTIC PACKAGE-4
Pin Count 4
Manufacturer Package Code SOT143B
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Samacsys Manufacturer NXP
Additional Feature LOW NOISE
Case Connection SOURCE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 0.03 A 0.03 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 4
Operating Mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.2 W 0.2 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish TIN Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Base Number Matches 1 6

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