BF993
vs
BF991T/R
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SIEMENS A G
|
NXP SEMICONDUCTORS
|
| Package Description |
SMALL OUTLINE, R-PDSO-G4
|
MICRO MINIATURE, PLASTIC, SMD, 4 PIN
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
20 V
|
20 V
|
| Drain Current-Max (ID) |
0.05 A
|
0.02 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Highest Frequency Band |
VERY HIGH FREQUENCY BAND
|
VERY HIGH FREQUENCY BAND
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
DUAL GATE, DEPLETION MODE
|
DUAL GATE, DEPLETION MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.2 W
|
0.2 W
|
| Power Gain-Min (Gp) |
25 dB
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
3
|
| Pin Count |
|
4
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Transistor Application |
|
AMPLIFIER
|
|
|
|
Compare BF993 with alternatives
Compare BF991T/R with alternatives