BF993
vs
BF992-TAPE-7
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SIEMENS A G
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PDSO-G4
SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Case Connection
SOURCE
SOURCE
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
20 V
Drain Current-Max (ID)
0.05 A
0.04 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
VERY HIGH FREQUENCY BAND
VERY HIGH FREQUENCY BAND
JESD-30 Code
R-PDSO-G4
R-PDSO-G4
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
4
4
Operating Mode
DUAL GATE, DEPLETION MODE
DUAL GATE, DEPLETION MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
0.2 W
Power Gain-Min (Gp)
25 dB
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
1
Feedback Cap-Max (Crss)
0.04 pF
Transistor Application
AMPLIFIER
Compare BF993 with alternatives
Compare BF992-TAPE-7 with alternatives