BF256C
vs
2N5670
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
MOTOROLA INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE
FET Technology
JUNCTION
JUNCTION
Feedback Cap-Max (Crss)
0.7 pF
3 pF
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
VERY HIGH FREQUENCY BAND
JEDEC-95 Code
TO-92
TO-92
JESD-30 Code
O-PBCY-T3
O-PBCY-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
DEPLETION MODE
DEPLETION MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
0.3 W
0.31 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
12
10
Package Description
CYLINDRICAL, O-PBCY-T3
DS Breakdown Voltage-Min
25 V
Drain Current-Max (ID)
0.02 A
Power Gain-Min (Gp)
16 dB
Transistor Application
AMPLIFIER
Compare BF256C with alternatives
Compare 2N5670 with alternatives