BF1100WRT/R
vs
3SK295
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Not Recommended
Ihs Manufacturer
NXP SEMICONDUCTORS
RENESAS ELECTRONICS CORP
Package Description
SMALL OUTLINE, R-PDSO-G4
MPAK-4
Pin Count
4
4
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Additional Feature
LOW NOISE
Case Connection
SOURCE
SOURCE
Configuration
COMPLEX
SINGLE
DS Breakdown Voltage-Min
14 V
12 V
Drain Current-Max (ID)
0.03 A
0.025 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
0.035 pF
0.03 pF
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-PDSO-G4
R-PDSO-G4
JESD-609 Code
e3
Number of Elements
2
1
Number of Terminals
4
4
Operating Mode
DUAL GATE, ENHANCEMENT MODE
DUAL GATE, DEPLETION MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
7
Date Of Intro
1997-03-01
Power Dissipation-Max (Abs)
0.15 W
Power Gain-Min (Gp)
16 dB
Compare BF1100WRT/R with alternatives
Compare 3SK295 with alternatives